Electronic Structure and Bonding Configuration of Histidine on Ge(100) 


Vol. 31,  No. 11, pp. 3217-3220, Nov.  2010
10.5012/bkcs.2010.31.11.3217


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  Abstract

The electronic structures and bonding configuration of histidine on Ge(100) have been investigated with various sample treatments using core-level photoemission spectroscopy (CLPES). Interpretation of the Ge 3d, C 1s, N 1s, and O 1s core level spectra being included in these systems revealed that both the imino nitrogen in the imidazole ring and the carboxyl group in the glycine moiety concurrently participate in the adsorption of histidine on a Ge(100) surface at 380 K. Moreover, we could clearly confirm that the imino nitrogen with a free lone pair in the imidazole group adsorbs on Ge(100) more strongly than the carboxyl group in the glycine moiety by examining systems annealed at various temperatures.

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  Cite this article

[IEEE Style]

H. Lee, Y. S. Youn, S. Yang, S. J. Jung, S. Kim, "Electronic Structure and Bonding Configuration of Histidine on Ge(100)," Bulletin of the Korean Chemical Society, vol. 31, no. 11, pp. 3217-3220, 2010. DOI: 10.5012/bkcs.2010.31.11.3217.

[ACM Style]

Hangil Lee, Young Sang Youn, Sena Yang, Soon Jung Jung, and Sehun Kim. 2010. Electronic Structure and Bonding Configuration of Histidine on Ge(100). Bulletin of the Korean Chemical Society, 31, 11, (2010), 3217-3220. DOI: 10.5012/bkcs.2010.31.11.3217.

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ISSN(Print) 0253-2964
ISSN(Online) 1229-5949