Synthesis and Photoelectronic Properties of Thermally Stable Poly[oxy(2,7-fluoren-9-onenylene)oxy(diorganosilylene)]s 


Vol. 33,  No. 6, pp. 2031-2036, Jun.  2012
10.5012/bkcs.2012.33.6.2031


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  Abstract

Melt copolymerization reactions of several bis(diethylamino)silane derivatives, bis(diethylamino)methylphenylsilane, bis(diethylamino)methyloctylsilane, 1,2-bis(diethylamino)tetramethyldisilane, and 1,3-bis(diethylamino) tetramethyldisiloxane, with 2,7-dihydroxyfluoren-9-one were carried out to yield poly[oxy(2,7-fluoren- 9-onenylene)oxy(diorganosilylene)]s bearing the fluoren-9-one fluorescent aromatic group in the polymer main chain: poly[oxy(2,7-fluoren-9-onenylene)oxy(methylphenylsilylene)], poly[oxy(2,7-fluoren-9-onenylene) oxy(methyloctylsilylene)], poly[oxy(2,7-fluoren-9-onenylene)oxy(tetramethyldisilylene)], and poly[oxy- (2,7-fluoren-9-onenylene)oxy(tetramethyldisiloxanylene)]. These polymeric materials are soluble in common organic solvents such as CHCl3 and THF. FTIR spectra of all the materials reveal characteristic Si-O-C stretching frequencies at 1012-1018 cm−1. In the THF solution, the prepared materials show strong maximum absorption peaks at 258-270 nm, strong maximum excitation peaks at 260-280 nm, and strong maximum fluorescence emission bands at 310-420 nm. TGA thermograms suggest that most of the polymers are essentially stable to 200 °C without any weight loss and up to 300 °C with only a weight loss of less than 5% in nitrogen.

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  Cite this article

[IEEE Style]

E. A. Jung and Y. T. Park, "Synthesis and Photoelectronic Properties of Thermally Stable Poly[oxy(2,7-fluoren-9-onenylene)oxy(diorganosilylene)]s," Bulletin of the Korean Chemical Society, vol. 33, no. 6, pp. 2031-2036, 2012. DOI: 10.5012/bkcs.2012.33.6.2031.

[ACM Style]

Eun Ae Jung and Young Tae Park. 2012. Synthesis and Photoelectronic Properties of Thermally Stable Poly[oxy(2,7-fluoren-9-onenylene)oxy(diorganosilylene)]s. Bulletin of the Korean Chemical Society, 33, 6, (2012), 2031-2036. DOI: 10.5012/bkcs.2012.33.6.2031.

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ISSN(Print) 0253-2964
ISSN(Online) 1229-5949