Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics 


Vol. 33,  No. 7, pp. 2207-2212, Jul.  2012
10.5012/bkcs.2012.33.7.2207


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  Abstract

Dimethylaluminum isopropoxide (DMAI, (CH3)2AlOiPr) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide (AlOx) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited AlOx film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that β-hydrogen elimination mechanism is mainly contributed to the AlOx CVD process of DMAI precursor. The current-voltage characteristics of the AlOx film in Au/AlOx/Ir metalinsulator- metal (MIM) capacitor structure show high ON/OFF ratio larger than ~106 with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

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  Cite this article

[IEEE Style]

S. S. Lee, E. Lee, S. H. Kim, B. K. Lee, S. J. Jeong, J. H. Hwang, C. G. Kim, T. Chung, K. An, "Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics," Bulletin of the Korean Chemical Society, vol. 33, no. 7, pp. 2207-2212, 2012. DOI: 10.5012/bkcs.2012.33.7.2207.

[ACM Style]

Sun Sook Lee, Eun-Seok Lee, Seok Hwan Kim, Byung Kook Lee, Seok Jong Jeong, Jin Ha Hwang, Chang Gyoun Kim, Taek-Mo Chung, and Ki-Seok An. 2012. Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics. Bulletin of the Korean Chemical Society, 33, 7, (2012), 2207-2212. DOI: 10.5012/bkcs.2012.33.7.2207.

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ISSN(Print) 0253-2964
ISSN(Online) 1229-5949