Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor 


Vol. 35,  No. 11, pp. 3299-3302, Nov.  2014
10.5012/bkcs.2014.35.11.3299


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  Abstract

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et)3NH]+[In(SCOCH3)4]−; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO2) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm2V−1s−1 at a curing temperature of 500 oC, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

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  Cite this article

[IEEE Style]

T. D. Dao and H. Jeong, "Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor," Bulletin of the Korean Chemical Society, vol. 35, no. 11, pp. 3299-3302, 2014. DOI: 10.5012/bkcs.2014.35.11.3299.

[ACM Style]

Tung Duy Dao and Hyun-Dam Jeong. 2014. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor. Bulletin of the Korean Chemical Society, 35, 11, (2014), 3299-3302. DOI: 10.5012/bkcs.2014.35.11.3299.

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ISSN(Print) 0253-2964
ISSN(Online) 1229-5949